Semiconductor light emitting device

Details Semiconductor light emitting device Semiconductor light emitting device

2007-06-12

2007-06-12

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With reflector, opaque mask, or optical element integral...

C257S102000

Reexamination Certificate

active

11165568

ABSTRACT:
A semiconductor light emitting device has: a semiconductor substrate; a semiconductor layer having an n-type cladding layer, an active layer, a p-type cladding layer and a p-type contact layer, wherein the p-type contact layer is made of an As-based material and located at the top of the semiconductor layer and doped with a p-type dopant at a concentration of 1×1019/cm3or more; a current spreading layer formed on the semiconductor layer and made of a metal oxide material; and a diffusion prevention layer formed between the p-type contact layer and the p-type cladding layer. The diffusion prevention layer is made of a group III–V semiconductor that has phosphorus as a group V element and has a crystal lattice mismatch ratio of within ±0.3% to the semiconductor substrate.

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patent: 6350997 (2002-02-01), Saeki
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patent: 8-83927 (1996-03-01), None
patent: 11-307810 (1999-11-01), None

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