Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2007-05-22
2007-05-22
Doan, Theresa T. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S089000, C257S103000
Reexamination Certificate
active
11208638
ABSTRACT:
A semiconductor light-emitting device including a light-emitting portion permitting light at a specific wavelength and having two surfaces opposite each other. The device also includes a first type of semiconductor substrate and a second type semiconductor substrate which are integrally joined to corresponding surfaces of the light-emitting portion and are substantially transparent to the wavelength. The semiconductor substrates have a joined surface on the surfaces of the light-emitting portion and outer side surfaces which have the width large on a side near the light-emitting portion and become narrow on a side away from the light-emitting portion and further surfaces opposite the joined surfaces. The device also includes first and second electrodes which are disposed on the corresponding further surfaces, a semiconductor layer in a region of at least one of the semiconductor substrates, and an impurity that causes current flow in concentrated manner through the middle of the light-emitting portion.
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Furukawa Kazuyoshi
Natsume Yoshinori
Nishiwaki Wakana
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