Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2007-07-10
2007-07-10
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S094000, C257S098000, C257SE33013, C372S043010, C372S072000
Reexamination Certificate
active
10900281
ABSTRACT:
A semiconductor light-emitting device includes a semiconductor light-emitting thin film, the thickness h of which satisfies the following conditional equation:0.9×(2m+1)λ04n≦h≦1.1×(2m+1)λ04nand m in the conditional equation satisfies the following conditional equation:2m+1m(m+1)λ02>ξwhere λ0is a center wavelength of light generated in the semiconductor light-emitting thin film, n is a refractive index of the semiconductor light-emitting thin film, m is 0 or a positive integer, and ξ is a half bandwidth of a light emission spectrum when there is no interference between light rays generated in the semiconductor light-emitting thin film.
REFERENCES:
patent: 6097041 (2000-08-01), Lin et al.
patent: 6188083 (2001-02-01), Kano
patent: 2003/0215266 (2003-11-01), Ishida et al.
patent: 2002-217450 (2002-08-01), None
Fujiwara Hiroyuki
Ogihara Mitsuhiko
Jackson Jerome
Nguyen Joseph
Oki Data Corporation
Rabin & Berdo P.C.
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