Semiconductor light emitting device

Details Semiconductor light emitting device Semiconductor light emitting device

1998-01-23

2000-08-22

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

257 99, 257773, H01L 2715

Patent

active

061076449

ABSTRACT:
A semiconductor light emitting device has semiconductor layers including a first conductivity type semiconductor layer and a second conductivity type semiconductor layer formed on a substrate. A first electrode is formed in electrical connection with the first conductivity type semiconductor layer on a surface side of the semiconductor layers. The second conductivity type semiconductor layer is exposed by partly etch-removing an end portion of the semiconductor layers. A second electrode is provided in electrical connection with the exposed second conductivity type layer. The first and second electrodes are formed such that the electrodes are in parallel, in plan form, with each other at opposite portions thereof. As a result, the current path is constant in electric resistance, providing a semiconductor light emitting device that is constant in brightness, long in service life and high in brightness.

REFERENCES:
patent: 5563422 (1996-10-01), Nakamura et al.

Affiliated with

Also associated with

Rating

Semiconductor light emitting device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor light emitting device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor light emitting device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-583970