Semiconductor light emitting device

Details Semiconductor light emitting device Semiconductor light emitting device

2006-03-28

2006-03-28

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S079000, C257S082000, C257S098000, C257S103000, C257S918000, C438S022000, C438S024000, C438S029000, C438S046000

Reexamination Certificate

active

07019323

ABSTRACT:
A semiconductor light emitting device is formed by adhering a semiconductor layered portion having a light emitting layer forming portion to a conductive substrate via a metal layer. The metal layer has at least a first metal layer for ohmic contact with the semiconductor layered portion, a second metal layer made of Ag, and a third metal layer made of a metal which allows adhesion to the conductive substrate at a low temperature. As a result, the rate of reflection of light from the metal layer increases due to the presence of Ag in the metal layer. Further, the metal in the metal layer is prohibited from diffusing into the semiconductor layer, so that the semiconductor layer does not absorb light. And therefore the brightness of the semiconductor light emitting device can further be increased.

REFERENCES:
patent: 5982546 (1999-11-01), Kawamoto et al.
patent: 6794690 (2004-09-01), Uemura
patent: 6836494 (2004-12-01), Stuart
patent: 2001-339100 (2001-12-01), None

Affiliated with

Also associated with

Rating

Semiconductor light emitting device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor light emitting device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor light emitting device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3591675