Semiconductor light emitting device

Details Semiconductor light emitting device Semiconductor light emitting device

2006-04-25

2006-04-25

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257S086000, C257S096000, C257S098000, C257S103000

Reexamination Certificate

active

07034342

ABSTRACT:
A light emitting layer forming portion is provided on a semiconductor substrate, in which an active layer made of a compound semiconductor is sandwiched between a first and second clad layers made of compound semiconductor having band gap greater than that of the active layer, respectively and having a different conductivity type each other and furthermore a window layer is provided above the second clad layer. The second clad layer is made of a semiconductor having refractive index greater than that of the first clad layer. More preferably the window layer is made of a semiconductor having a refractive index greater than that of the second clad layer. As a result, the absorption of the light emitted from the light emitting layer in the semiconductor substrate can be reduced, and the light can be attracted toward the top surface so that the external quantum efficiency can be advanced.

REFERENCES:
patent: 6469324 (2002-10-01), Wang
patent: 6635905 (2003-10-01), Nido et al.
patent: 55-91890 (1980-07-01), None
patent: 02-146779 (1990-06-01), None
patent: 2001-185756 (2001-07-01), None
Gardner et al., 14x efficiency improvement in transparent-substrate (AlxGa1−x)0.5In0.5P light-emitting diodes with thin (≦ 2000Å ) active regions; Apr. 12, 1999; Applied Physics Letters; vol. 74 No. 15; p2230-2232.

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