Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Reexamination Certificate
2006-09-26
2006-09-26
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
C257S089000, C257S098000, C257S102000, C257S091000, C257S095000, C257S092000, C257S096000
Reexamination Certificate
active
07112825
ABSTRACT:
A semiconductor laminating portion including a light emitting layer forming portion having at least an n-type layer and a p-type layer is formed on a semiconductor substrate. A current blocking layer is partially formed on its surface while a current diffusing electrode is formed on the entire surface thereof. The current diffusing electrode is patterned into a plurality of light emitting unit portions (A), electrode pad portion (B), and connecting portions (C) for connecting between the electrode pad portion (B) and the light emitting unit portions (A) or between two of the light emitting unit portions (A), and a part of the semiconductor laminating portion may be etched according to the patterning of the current diffusing electrode. The bonding electrode may be formed on the electrode pad portion (B) which is formed so as to make the light emitting layer forming portion non-luminous.
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Matsumoto Yukio
Oguro Nobuaki
Shakuda Yukio
Erdem Fazli
Flynn Nathan J.
Rabin & Berdo P.C.
Rohm & Co., Ltd.
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