Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2005-10-04
2005-10-04
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S099000, C438S022000, C438S025000, C438S027000
Reexamination Certificate
active
06952025
ABSTRACT:
A small-sized semiconductor light-emitting device of high emission directivity and high output is provided. A portion of a light extraction section of a semiconductor light-emitting device including a pn-junction portion is covered with a light-shielding substance of low conductivity. The electrical resistance of the light-shielding substance is 106Ωm or higher, and the substance contains powder of at least one species selected from metals and pigments. The powder of metal contains at least one species selected from among Al, Cu, Ag, Au, Pt, Ti, Ni, Sn, Pb, Mg, Zn, Fe, Co, and Cr. The powder is a plate-like powder having a thickness falling within a range of 0.001-10 μm and a length falling within a range of 0.01-100 μm.
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International Search Report for PCT/JP01/04725 dated Jan. 3, 2002.
Itoh Yuji
Kamemura Takayuki
Kobayashi Teruyuki
Mitani Kazuhiro
Nakamura Kasumi
Flynn Nathan J.
Mandala Jr. Victor A.
Showa Denko K.K.
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