Semiconductor light-emitting device

Electric lamp and discharge devices: systems – Plural power supplies – Plural cathode and/or anode load device

Reexamination Certificate

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C372S034000, C372S036000

Reexamination Certificate

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06954034

ABSTRACT:
A semiconductor laser device as one example of semiconductor light-emitting devices includes a semiconductor laser chip and a submount serving respectively as a semiconductor light-emitting device chip and a mount member, the semiconductor laser chip including a GaN substrate and a stack. The semiconductor laser chip is bonded to a mount surface of the submount by means of solder, with the stack facing the mount surface. The submount includes a material having a higher thermal expansion coefficient than GaN which is a material for the GaN substrate.

REFERENCES:
patent: 5383029 (1995-01-01), Kojima
patent: 5432808 (1995-07-01), Hatano et al.
patent: 5786606 (1998-07-01), Nishio et al.
patent: 6278173 (2001-08-01), Kobayashi et al.
patent: 6376866 (2002-04-01), Shakuda
patent: 6420197 (2002-07-01), Ishida et al.
patent: 6452214 (2002-09-01), Kaneyama et al.
patent: 6455342 (2002-09-01), Kobayashi et al.
patent: 6469320 (2002-10-01), Tanabe et al.
patent: 6482666 (2002-11-01), Kobayashi et al.
patent: 05-055712 (1993-03-01), None
patent: 11-145562 (1999-05-01), None
patent: 2000-058965 (2000-02-01), None
Cover sheet for above-referenced Japanese Laid Open No.: 2000-058965 entitled “Difference between the present application and prior art document”. 1 page.

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