Semiconductor light emitting device

Details Semiconductor light emitting device Semiconductor light emitting device

2005-05-10

2005-05-10

Leung, Quyen (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S045013

Reexamination Certificate

active

06891871

ABSTRACT:
An SiNxfilm is formed on partial side surfaces and an electrode forming surface excluding an n-side electrode of a first contact layer, the side surfaces of each layer, the upper surface of a second cladding layer and the side surfaces of a ridge portion. An SiOyfilm is formed on the SiNxfilm. The SiNxfilm and the SiOyfilm form a dielectric film.

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Jpn. J. Appln. Phys. vol. 36 (1997) pp. L 1568-L1571 Part 2, No. 12A, Dec. 1, 1997.

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