Semiconductor light-emitting device

Details Semiconductor light-emitting device Semiconductor light-emitting device

2005-07-26

2005-07-26

Tran, Minhloan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257S081000, C257S088000, C257S098000, C257S099000, C257S103000

Reexamination Certificate

active

06921924

ABSTRACT:
A method for manufacturing a semiconductor light-emitting device. The semiconductor light-emitting device has a substrate, and a semiconductor layer, a n-type semiconductor layer, and a p-type semiconductor layer successively formed atop the substrate. The method forms an intermediate layer having a predetermined pattern between the substrate and the semiconductor layer, or between the semiconductor layer and the n-type semiconductor layer, or between the n-type semiconductor layer and the p-type semiconductor layer. The p-type semiconductor layer has an uneven top layer due to the intermediate layer having a predetermined pattern and the total internal reflection of the LED can be reduced. The intermediate layer is a conductive material to reduce serial resistance of the LED.

REFERENCES:
patent: 5727008 (1998-03-01), Koga
patent: 6576533 (2003-06-01), Tomiya et al.
patent: 2002/0088970 (2002-07-01), Yu et al.
patent: 2002/0145148 (2002-10-01), Okuyama et al.
patent: 2003/0047745 (2003-03-01), Suzuki et al.

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