Semiconductor light-emitting device

Details Semiconductor light-emitting device Semiconductor light-emitting device

1996-12-12

1998-07-28

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

257 77, H01L 3300, H01L 310312

Patent

active

057866066

ABSTRACT:
Disclosed is a semiconductor light-emitting device, comprising a substrate, a thin film formed on the substrate and containing silicon carbide as a main component, a buffer layer formed on the thin film and consisting of a gallium nitride-based material, and a laminate structure formed on the buffer layer and consisting of a plurality of gallium nitride-based material layers, wherein the total thickness of the substrate and the thin film is at least twice the thickness of the buffer layer and is smaller than the thickness of the laminate structure.

REFERENCES:
patent: 3960619 (1976-06-01), Seiter
patent: 4990994 (1991-02-01), Furakawa et al.
patent: 5247533 (1993-09-01), Okazaki et al.
patent: 5273933 (1993-12-01), Hatano et al.
patent: 5408120 (1995-04-01), Manabe et al.
patent: 5432808 (1995-07-01), Hatano et al.
patent: 5523589 (1996-06-01), Edmond et al.
Fernando Guarin, et al. "SOI Wafers for Crystalline SiC and GaN Growth", Extended Abstracts, vol. 95-1, Spring Meeting, (pp. 631-632), Reno, NV, May 1995.

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