Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2007-08-21
2007-08-21
Andujar, Leonardo (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
C257S079000, C257S013000, C257S078000, C257S085000, C257S090000, C257SE25019
Reexamination Certificate
active
10973193
ABSTRACT:
A semiconductor light emitting apparatus is proposed, which has thyristor without increasing number of constituent semiconductor layers, with large degree of freedom of selection of ON voltage. It comprises first-conductivity-type first cladding layer, active layer, and second-conductivity-type second cladding layer on substrate; pair of opposing first recesses forming stripe-patterned ridge configuring major current path, and second recess disposed on outer side of one of first recesses on second cladding layer side, each recesses formed to depth keeping active layer unreached; first-conductivity-type current blocking layer formed over inner surfaces of first and second recesses, and second-conductivity-type contact layer formed on current blocking layer; wherein light emitting portion and thyristor structural portion composed of stack of second-conductivity-type contact layer, first-conductivity-type current blocking layer, second-conductivity-type cladding layer, active layer and first-conductivity-type first cladding layer at second recess are formed; and ON voltage of thyristor is adjustable on selection of depth of second recess.
REFERENCES:
patent: 6608850 (2003-08-01), Inaba
patent: 2004/0195576 (2004-10-01), Watanabe et al.
patent: 05-067849 (1993-03-01), None
Depke Robert J.
Rockey, Depke, Lyons & Kitzinger LLC.
Sony Corporation
Wilson Scott R.
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