Semiconductor light emitter

Details Semiconductor light emitter Semiconductor light emitter

2007-06-26

2007-06-26

Ngô, Ngân V. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257S098000, C257S103000, C257SE33013, C257SE33049, C257SE33072

Reexamination Certificate

active

11155730

ABSTRACT:
A semiconductor light emitter includes a quantum well active layer which includes nitrogen and at least one other Group-V element, and barrier layers which are provided alongside the quantum well active layer, wherein the quantum well active layer and the barrier layers together constitute an active layer, wherein the barrier layers are formed of a Group-III-V mixed-crystal semiconductor that includes nitrogen and at least one other Group-V element, a nitrogen composition thereof being smaller than that of the quantum well active layer.

REFERENCES:
patent: 5577062 (1996-11-01), Takahashi
patent: 5627851 (1997-05-01), Takahashi
patent: 5684523 (1997-11-01), Satoh et al.
patent: 5793073 (1998-08-01), Kaminishi et al.
patent: 5801071 (1998-09-01), Takahashi
patent: 5804720 (1998-09-01), Morimasa et al.
patent: 5852239 (1998-12-01), Sato et al.
patent: 5904549 (1999-05-01), Sato
patent: 5923691 (1999-07-01), Sato
patent: 5939733 (1999-08-01), Sato
patent: 5983700 (1999-11-01), Yamaguchi et al.
patent: 6002700 (1999-12-01), Sato
patent: 6049556 (2000-04-01), Sato
patent: 6072196 (2000-06-01), Sato
patent: 6118166 (2000-09-01), Shoji et al.
patent: 6203673 (2001-03-01), Shoji et al.
patent: 6207973 (2001-03-01), Sato et al.
patent: 6233264 (2001-05-01), Sato
patent: 6281518 (2001-08-01), Sato
patent: 6300650 (2001-10-01), Sato
patent: 6348698 (2002-02-01), Sato
patent: 6382800 (2002-05-01), Sato
patent: 6449299 (2002-09-01), Sato
patent: 6452215 (2002-09-01), Sato
patent: 6542528 (2003-04-01), Sato et al.
patent: 6563851 (2003-05-01), Jikutani et al.
patent: 6614821 (2003-09-01), Jikutani et al.
patent: 6617618 (2003-09-01), Sato
patent: 6697404 (2004-02-01), Sato
patent: 6798809 (2004-09-01), Gambin et al.
patent: 2001/0030319 (2001-10-01), Sato et al.
patent: 2002/0074631 (2002-06-01), Sato et al.
patent: 2002/0179929 (2002-12-01), Takahashi et al.
patent: 2002/0195607 (2002-12-01), Sato
patent: 2003/0006429 (2003-01-01), Takahashi et al.
patent: 2003/0013224 (2003-01-01), Shimizu et al.
patent: 2003/0053501 (2003-03-01), Sekiya et al.
patent: 2003/0138015 (2003-07-01), Sato et al.
patent: 2003/0205731 (2003-11-01), Sato
patent: 2004/0135136 (2004-07-01), Takahashi et al.
patent: 2004/0161006 (2004-08-01), Chang et al.
patent: 2005/0031005 (2005-02-01), Cheng et al.
patent: 2006/0054899 (2006-03-01), Takahashi et al.
patent: 2006/0236923 (2006-10-01), Kouvetakis et al.
patent: 2006/0261352 (2006-11-01), Takahashi et al.
patent: 6-37355 (1994-02-01), None
patent: 8-195522 (1996-07-01), None
patent: 10-126004 (1998-05-01), None
patent: 10-145003 (1998-05-01), None
patent: 2000-332363 (2000-11-01), None
patent: 2001-251021 (2001-09-01), None
patent: 2002-118329 (2002-04-01), None
Uesugi et al., “MOMBE Growth and Characterization of GaAsN/GaAsSb Superlattice Structure,” The 62nd Japan Society of Applied Physics, 13p-T-13.
Tateno et al., “Refractive Index of GaAsNSb Layers Grown on GaAs Substrates by MOCVD” The 62nd Japan Society of Applied Physics, 13p-T-12.
Gambin et al, “Long Wavelength GaInNAsSb/GaNAsSb Multiple Quantum Well Lasers” Electronics Letters Mar. 14, 2002, vol. 38, No. 6, pp. 277-278.
Koyama et al. “Data Transmission Over Single-Mode Fiber by Using 1.2-img id="CUSTOM-CHARACTER-00001" he="2.79mm" wi="2.79mm" file="US07235816-20070626-P00001.TIF" alt="custom character" img-content="character" img-format="tif" ?m Uncooled GaInAs-GaAs Laser for Gb/S Local Area Network” IEEE Photonics Technology Letters, vol. 12, No. 2, pp. 125-127, Feb. 2000.
Shunichi Sato, “Low Threshold and High Characteristic Temperature 1.3img id="CUSTOM-CHARACTER-00002" he="2.79mm" wi="2.79mm" file="US07235816-20070626-P00002.TIF" alt="custom character" img-content="character" img-format="tif" ?m Range GaInNAs Lasers Grown by Metalorganic Chemical Vapor Deposition” Japan J. Appl. Phys., vol. 39, 05, Part 1, No. 6A, pp. 3403-3405(Jun. 2000).
Kondow et al., “GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance” Japan J. Appl. Phys., vol. 35, Part 1, No. 2B, pp. 1273-1275 (Feb. 1996).
Gouardes et al., “GaInAs-GaInNAs-GaInAs Intermediate Layer Structure for Long Wavelength Lasers” IEEE Photonics Technology Letters, vol. 14, No. 7, pp. 896-898, (Jul. 2002).
Peng et al., “Suppression of Interfacial Atomic Diffusion in inGaNAs/GaAs Heterostructures Grown by Molecular-beam Epitaxy” Applied Physics Letters, vol. 80, No. 25, pp. 4720-4722, (Jun. 24, 2002).
Li et al., “Effects of Rapid Thermal Annealing on Strain-Compensated GaInNAs/GaAsP Quantum Well Structures and Lasers” Applied Physics Letters, vol. 78, No. 1, (Jan. 1, 2001).

Affiliated with

Also associated with

Rating

Semiconductor light emitter does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor light emitter, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor light emitter will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3833757