Semiconductor light emission system

Details Semiconductor light emission system Semiconductor light emission system

1990-11-13

1991-11-26

Epps, Georgia

Coherent light generators

Particular active media

Semiconductor

357 17, 357 34, 357 40, H01S 319

Patent

active

050688707

ABSTRACT:
A semiconductor light emission system, comprising a semiconductor laser part constituted of a second conductive current restricting layer with a striped groove perforated therein, a first conductive clad layer, a first or second conductive active layer, a second conductive clad layer on a first conductive substrate, and a second conductive - first conductive - second conductive bipolar transistor part constituted of said second conductive current restricting layer, first conductive clad layer, first or second conductive active layer, second conductive active layer in a position other than the semiconductor laser part.

REFERENCES:
patent: 4388633 (1983-06-01), Vasuder
patent: 4513423 (1985-04-01), Katz et al.
patent: 4521888 (1985-06-01), Hayashi et al.
patent: 4748633 (1988-05-01), Negishi
J. Katz "A Monolithic Integration of GaAs/GaAlAs Bipolar Transistor and Heterostructure Laser," Appl./Phys. Lett. 37(2), Jul. 15, 1980, pp. 211-213.

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