Semiconductor light emission system

Details Semiconductor light emission system Semiconductor light emission system

1987-09-16

1991-10-22

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 38, H01S 319

Patent

active

050602365

ABSTRACT:
A semiconductor light emission system, comprising a semiconductor laser part constituted of a second conductive current restricting layer with a striped groove perforated therein, a first conductive clad layer, a first or second conductive active layer, a second conductive clad layer on a first conductive substrate, and a second conductive--first conductive-second conductive bipolar transistor part constituted of said second conductive current restricting layer, first conductive clade layer, first or second conductive active layer, second conductive active layer in a position other than the semiconductor laser part.

REFERENCES:
patent: 4388633 (1983-06-01), Vasudev
patent: 4513423 (1985-04-01), Katz et al.
patent: 4521888 (1985-06-01), Hayashi et al.
patent: 4748633 (1988-05-01), Negishi
J. Katz et al., "A Monolithic Integration of GaAs/GaAlAs Bipolar Transistor and Hetero-Structure Laser", Appl. Phys. Lett. 37(2), Jul. 15, 1980, pp. 211-213.

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