Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Patent
1993-09-14
1994-08-30
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
257187, 257453, 257462, H01L 2714
Patent
active
053430549
ABSTRACT:
According to this invention, a phototransistor includes an n-type InP emitter layer formed on an n.sup.+ -type InP substrate, a p.sup.- -type InGaAsP base layer, and a light-absorbing n.sup.- -type InGaAsP collector layer. An undoped InGaAs multiple quantum well layer is interposed between the emitter and base layers. An emitter electrode is in contact with the substrate, and a collector electrode is in contact with an n.sup.+ -type InP cap layer for covering the collector layer. A reverse bias voltage is applied across the emitter and collector electrodes. The rate at which electrons injected from the emitter layer to the quantum well layer and holes injected from the collector layer to the quantum well layer are combined with each other and disappear in a state wherein detection light is not incident is higher than that in a state wherein the detection light is incident. For this reason, a digital output signal can be directly obtained from the transistor action of this invention.
REFERENCES:
patent: 4620210 (1986-10-01), Scavennec et al.
Campbell et al., "Heterojunction Phototransistors for Long-Wavelength Optical Receivers," J. Appl. Phys. 53(2), Feb. 1982, pp. 1203-1208.
Unlu et al, "Resonant Cavity Enhanced AlGaAs/GaAs Heterojunction Phototransistors with an Intermediate InGaAs Layer in the Collector," Appl. Phys. Lett. 57(8), Aug. 20, 1990, pp. 750-752.
Leu et al, "High Sensitivity In.sub.0.53 Ga.sub.0.47 As/InP Heterojunction Phototransistors," Appl. Phys. Lett. 57(12), Sep. 17, 1990, pp. 1251-1253.
"Demonstration of Novel Quantum Well Gate Controlled Photodetector Switch," J. M. Xu, et al., Electronics Letters, Feb. 27, 1992 vol. 28, No. 5 pp. 501-503.
"Wavelength Discriminating Optical Switch," IEEE Transactions on Photonics Technology Letters, vol. 3, No. 12; M. S. Unlu; Dec., 1991 pp. 1126-1129.
"Demonstration of High Performance Heterojunction Field Effect Transistor in InAlAs/InGaAs/InAlGaAs/InP Material System," Electronics Letters, vol. 27, No. 16, R. S. Mand and J. G. Simmons; Aug. 1, 1991, pp. 1453-1454.
Furuyama Hideto
Maroney, III James T.
Kabushiki Kaisha Toshiba
Mintel William
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