Semiconductor light detection device having secondary region to

Details Semiconductor light detection device having secondary region to Semiconductor light detection device having secondary region to

1994-05-06

1995-05-30

Allen, Stephone B.

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

257461, 257626, H01J 4014, H01J 2714

Patent

active

054204186

ABSTRACT:
This invention relates to a light detecting device comprising a first conduction-type semiconductor substrate, a first conduction-type semiconductor crystal layer formed on the surface of the substrate, and a second conduction-type first region formed in the semiconductor crystal layer. The first region is surrounded by a second conduction-type second region. On the surface of the semiconductor crystal layer, an electrode is formed on the first region, and a reflection preventing layer is formed on that part of the first region inside the electrode, and a device protecting film is formed on that part of the first region outside the electrode. On the semiconductor crystal layer, a metal film is formed in contact both with the semiconductor crystal layer and with the second region. This structure enables the second region to capture unnecessary charges and further to recombine and extinguish them.

REFERENCES:
patent: 4906583 (1990-03-01), Kagawa et al.
patent: 4949144 (1990-08-01), Kuroda et al.
patent: 5332919 (1994-07-01), Fujimura

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