Semiconductor light detecting element including first and...

Details Semiconductor light detecting element including first and... Semiconductor light detecting element including first and...

2011-02-22

2011-02-22

Sefer, A. (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

C257S184000, C257S225000, C257S290000, C257S431000, C257S432000, C257S437000, C257S461000, C257SE31019, C257SE31059

Reexamination Certificate

active

07893460

ABSTRACT:
A semiconductor light detecting element comprises: a semiconductor substrate having a first major surface and a second major surface opposite each other; a first reflective layer, an absorptive layer, a phase adjusting layer, and a second reflective layer sequentially disposed, from the semiconductor substrate, on the first major surface of the semiconductor substrate; and an anti-reflection film on the second major surface of the semiconductor substrate. The first reflective layer is a multilayer reflective layer including laminated semiconductor layers having different refractive indices; the absorptive layer has a band gap energy smaller than band gap energy of the semiconductor substrate; the phase adjusting layer has a band gap energy larger than the band gap energy of the absorptive layer; and the first reflective layer contacts the absorptive layer, without intervention of other layers.

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Kuchibhotlal, R. et al.; “Low-Voltage High-Gain Resonant-Cavity Avalanche Photodiode”,IEEE Photonics Technology Letters., vol. 3, No. 4, pp. 354-356, (Apr. 1991).

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