Semiconductor light detecting element and method for...

Details Semiconductor light detecting element and method for... Semiconductor light detecting element and method for...

2009-04-20

2010-12-21

Dang, Trung (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

C438S094000, C257SE21352, C257SE31019

Reexamination Certificate

active

07855400

ABSTRACT:
A semiconductor light detecting element having a mesa structure comprises: a first semiconductor layer having n-type conductivity located on a semiconductor substrate, a light absorbing layer located on the first semiconductor layer, and a second semiconductor layer located on the light absorbing layer; a burying layer burying peripheries of the light absorbing layer and the second semiconductor layer. The burying layer has a band gap larger than the band gap of the light absorbing layer. The second semiconductor layer has a first region having p-type conductivity, and a second region having i-type or n-type conductivity and located between the first region and the burying layer.

REFERENCES:
patent: 6005266 (1999-12-01), Forrest et al.
patent: 6635908 (2003-10-01), Tanaka et al.
patent: 2002/0185702 (2002-12-01), Shirai et al.
patent: 2008/0308891 (2008-12-01), Boisvert et al.
patent: 0 609 884 (1994-02-01), None
patent: 2006-232442 (1994-08-01), None
patent: 2002-324911 (2002-11-01), None

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