Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Patent
1995-12-07
1996-09-03
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
257458, 257465, 257466, H01L 3100
Patent
active
055526160
ABSTRACT:
A light detecting device of the present invention comprises a third semiconductor layer containing a second conductive impurity which is formed in the upper part of a semiconductor layer containing a first conductive impurity and a fourth semiconductor layer containing the second conductive impurity which is formed in the semiconductor layer around the third semiconductor layer with an interval between the layers.
REFERENCES:
patent: 4857982 (1989-08-01), Forrest
patent: 5304824 (1994-04-01), Tonai
patent: 5332919 (1994-07-01), Fujimura
Fujitsu Limited
Mintel William
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