Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device
Patent
1993-12-01
1995-05-02
Nguyen, Viet Q.
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
257184, 257200, 257 12, 257 21, 257431, 257432, 257433, 257436, H01L 2714, H01L 3300
Patent
active
054122295
ABSTRACT:
A semiconductor light detecting device in which a housing with an optical fiber is inserted in is secured to a header with a photodiode chip mounted on integral therewith, and a light detecting surface of the photodiode chip is opposed to a light emitting surface of the optical fiber, the photodiode chip having a pn junction, the first region is surrounded by a second region of the second conductivity type formed at a portion of the semiconductor layer. The second region has the same or larger depth as or than that of the first region. Thus, even if a light is directed to the outside of the photo-sensing region, extra charges into the photo-sensing region is prevented. As a result, no optical lens system is necessary, and if an optical lens system is used, an inexpensive optical system may be used. Further, the device itself can be fabricated at low costs and easily.
REFERENCES:
patent: 4819039 (1989-04-01), Chi et al.
patent: 4949144 (1990-08-01), Kuroda et al.
patent: 4999842 (1991-03-01), Huang et al.
patent: 5068869 (1991-11-01), Wang et al.
patent: 5153889 (1992-10-01), Sugawara et al.
Koseki Hideaki
Kuhara Yoshiki
Michikoshi Hisato
Tonai Ichiro
Nguyen Viet Q.
Sumitomo Electric Industries Ltd.
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