Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Active layer of indirect band gap semiconductor
Reexamination Certificate
2007-11-06
2011-10-04
Landau, Matthew (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Active layer of indirect band gap semiconductor
C257SE27120, C257SE33005
Reexamination Certificate
active
08030668
ABSTRACT:
A light emitting diode demonstrating high luminescence efficiency and comprising a Group IV semiconductor such as silicon or germanium equivalent thereto as a basic component formed on a silicon substrate by a prior art silicon process, and a fabricating method of waveguide thereof are provided. The light emitting diode of the invention comprises a first electrode for implanting electrons, a second electrode for implanting holes, and a light emitting section electrically connected to the first and the second electrode, wherein the light emitting section is made out of single crystalline silicon and has a first surface and a second surface facing the first surface, wherein with respect to plane orientation (100) of the first and second surfaces, the light emitting section crossing at right angles to the first and second surfaces is made thinner, and wherein a material having a high refractive index is arranged around the thin film section.
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Hisamoto Digh
Kimura Shin'ichiro
Saito Shin-ichi
Hitachi , Ltd.
Landau Matthew
McCall Shepard Sonya
Miles & Stockbridge P.C.
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