Semiconductor LED flip-chip with dielectric coating on the mesa

Details Semiconductor LED flip-chip with dielectric coating on the mesa Semiconductor LED flip-chip with dielectric coating on the mesa

2005-05-10

2005-05-10

Wilczeweki, Mary (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S099000

Reexamination Certificate

active

06891197

ABSTRACT:
A dielectric layer is formed on the mesa wall of a flip-chip LED. The dielectric layer is selected to maximize reflection of light incident at angles ranging from 10 degrees towards the substrate to 30 degrees away from the substrate. In some embodiments, the LED is a III-nitride device with a p-contact containing silver, the dielectric layer adjacent to the mesa wall is a material with a low refractive index compared to GaN, such as Al2O3.

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