Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2006-05-30
2006-05-30
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
C257S103000, C438S094000
Reexamination Certificate
active
07053417
ABSTRACT:
The present invention provides a semiconductor device with InxGa1-xN crystal passivation layer and manufacturing method thereof which effectively blocks the leakage current between the surface & boundary of a device and a pn-junction boundary, and enhances the light emission efficiency as forming new structural semiconductor devices by removing the conventional dielectric passivation layer and using InxGa1-xN crystal layer instead.A semiconductor device with gallium nitride type crystal passivation layer, wherein said semiconductor device has a p-n junction diode construction and forms a InxGa1-xN crystal passivation layer with a specified thickness and a width around the edge of the upper surface of p-GaN layer which is the top layer of the semiconductor device.
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Blackwell Sanders Peper Martin LLP
Epivalley Co., Ltd.
Jackson Jerome
Samsung Electro-Mechanics Co. Ltd.
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