Semiconductor lead frame

Active solid-state devices (e.g. – transistors – solid-state diode – Lead frame – Of specified material other than copper

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Details

257766, 257748, 257768, 427328, H01L 23495, H01L 2348, B05D 300, B05D 312

Patent

active

057675740

ABSTRACT:
A semiconductor lead frame having an improved structure formed of plated layers is provided. The semiconductor lead frame has the structure of multi-plated layers in which a Ni plated layer, a Pd strike plated layer, and a Pd--X alloy plated layer are deposited on a substrate in the described order. In such a multi-plated layer structure, the Pd strike plated layer covers the porous surface of the Ni plated layer and decreases the surface roughness. Since the thickness of the outer Pd--X alloy plated layer can be maintained uniform due to the Pd strike plated layer, corrosion durability and bonding characteristics are enhanced, thus minimizing the generation and progress of cracks.

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