Semiconductor LDMOS device with upper and lower passages

Details Semiconductor LDMOS device with upper and lower passages Semiconductor LDMOS device with upper and lower passages

1987-12-24

1990-05-01

Mintel, William

357 231, 357 238, H01L 2978

Patent

active

049223275

ABSTRACT:
A semiconducting device and method of making the same are provided. The semiconducting device is provided with a gate, a source and a drain disposed on one side of a current carrying layer and a substrate formed from one type of semiconducting material disposed on the other side thereof. The current carrying layer includes a bulk region formed from said one type of semiconducting material and a drift region formed from the opposite type of semiconducting material, the bulk and the drift regions of which form a pn junction. The drift region includes a pair of parallel passages, one passage of which has a lower doping concentration than the other. The bulk region includes a first and a second portion, the first portion of which isolates the second portion from the other passage and has a lower doping concentration than the second portion and the one passage. The one passage is also extended so as to isolate the bulk region from the substrate. Source and drain regions located on opposite sides of the junction are also provided and formed from the opposite type of semiconducting material. The source and drain regions are doped to have a higher doping concentration than the other passage. Thus, the semiconducting device maintains a relatively high breakdown voltage whilst exhibiting a low on-resistance.

REFERENCES:
patent: 4599118 (1986-07-01), Han et al.
Cauge et al., "Double-Diffused MOS Transistor Achieves Microwave Gain", Electronics, vol. 44, No. 4, Feb. 15, 1971, pp. 99-104.
Fong, "Power DMOS for High-Frequency and Switching Applications," IEEE Transactions on Electron Devices, vol. ED-27, No. 2, Feb. 1980, pp. 322-330.
Sai-Halasz, "Simple Realization of an Edge-Doped FET," IBM Technical Disclosure Bulletin, vol. 26, No. 6, Nov. 1983, pp. 3025-3026.

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