Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2007-07-20
2010-10-26
Harvey, Minsun (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S043010, C257S021000, C257S103000
Reexamination Certificate
active
07822089
ABSTRACT:
The semiconductor layer structure comprises a superlattice (9) composed of alternately stacked layers (9a, 9b) of III-V semiconductor compounds of a first composition (a) and at least one second composition (b). The layers (9a, 9b) of the superlattice (9) contain dopants in predetermined concentrations, with regard to which the concentrations of the dopants are different at least two layers of a same composition in the superlattice (9), the concentration of the dopants is graded within at least one layer (9a, 9b) of the superlattice (9), and the superlattice (9) comprises layers that are doped with different dopants or comprise at least one layer (9a, 9b) that is undoped. The electrical and optical properties of the superlattice (9) can be adapted to given requirements in the best possible manner in this way.
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Eichler Christoph
Lell Alfred
Fish & Richardson P.C.
Harvey Minsun
Nguyen Phillip
Osram Opto Semiconductors GmbH
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