Semiconductor layer structure having distributed strain and opti

Details Semiconductor layer structure having distributed strain and opti Semiconductor layer structure having distributed strain and opti

1994-10-03

1996-08-27

Meier, Stephen O.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257194, H01L 310328, H01L 310336, H01L 31072, H01L 31109

Patent

active

055503934

ABSTRACT:
A semiconductor layer structure comprises a first semiconductor layer, and a second semiconductor layer adjacent the first layer at a boundary. The first semiconductor layer has a uniform lattice constant in its layering direction. The second semiconductor layer has a distributed lattice constant varying in its layering direction. Each region of the second semiconductor layer is strained due to biaxial strain introduced by a difference in lattice constant between each region and the first semiconductor layer. The strain in the second semiconductor layer has a distribution such that no crystal defects occur in the second semiconductor layer when the second layer is thicker than a critical thickness defined by the maximum strain in the second layer. The strained semiconductor layer structure may be used as a light confinement layer in a semiconductor optical device.

REFERENCES:
patent: 5239410 (1993-08-01), Nishimura et al.
patent: 5331410 (1994-07-01), Kawata
"Defects In Epitaxial Multilayers", J. W. Matthews et al., Journal of Crystal Growth 27 (1974), pp. 118-125.
"Critical thickness in epitaxial GaAsP: comparison of theory and experiment", Bradley A. Fox et al., Journal of Crystal Growth 109 (1991), pp. 252-257.

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