Semiconductor layer structure and recording medium for a large c

Details Semiconductor layer structure and recording medium for a large c Semiconductor layer structure and recording medium for a large c

1996-02-08

1998-12-22

Niebling, John F.

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Thinning of semiconductor substrate

438928, 438977, H01L 21030, H01L 2146

Patent

active

058519025

ABSTRACT:
A layered structure for a semiconductor substrate has a planar surface, lighter weight, and increased flexural rigidity. By decreasing warping in a multilayered recording medium that arises when forming the recording layer, while suppressing an increase in the weight of the memory substrate, a recording medium for a compact, large capacity memory device can be manufactured. The recording medium is positioned opposite a read/write circuit substrate that is provided with a plurality of miniature probes. A recording layer is formed on a front surface of a memory substrate, a beam structure for reinforcing flexural rigidity is formed on a back surface of said memory substrate. A conductive layer may be formed between the memory substrate and the recording layer.

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patent: 5036490 (1991-07-01), Kajimura et al.
patent: 5216631 (1993-06-01), Silwa, Jr.
Wolf et al., Silicon Processing for the VLSI Era: vol. 1-Process Technology, Lattice Press, p. 539, 1986.

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