Semiconductor layer, process for forming the same, and...

Details Semiconductor layer, process for forming the same, and... Semiconductor layer, process for forming the same, and...

2007-04-02

2010-06-01

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C438S796000, C118S7230AN, C257SE21331

Reexamination Certificate

active

07727791

ABSTRACT:
A semiconductor layer contains, as a principal constituent, a Group III-V semiconductor compound, which may be represented by the general formula: AlxGayInzN, wherein x represents a number satisfying the condition 0≦x<1, y represents a number satisfying the condition 0<y<1, and z represents a number satisfying the condition 0<z<1, with the proviso that x+y+z=1. The semiconductor layer is formed with a laser assisted metalorganic vapor phase epitaxy technique. A semiconductor light emitting device comprises the semiconductor layer and may be constituted as a semiconductor laser or a light emitting diode.

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Ryuzo Ega et al., “Ar Ion Laser-Assisted Metalorganic Molecular Beam Epitaxy of InGaAs”, Japanese Journal of Applied Physics, vol. 30, No. 1A, Jan. 1991, pp. L4-L6.

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