Semiconductor layer, process for forming the same, and...

Details Semiconductor layer, process for forming the same, and... Semiconductor layer, process for forming the same, and...

2007-04-02

2009-12-22

Lee, Calvin (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

Active layer of indirect band gap semiconductor

C438S022000

Reexamination Certificate

active

07635872

ABSTRACT:
A semiconductor layer contains, as a principal constituent, a Groups III-V semiconductor compound, which may be represented by the general formula: BxAlyGazN, wherein x represents a number satisfying the condition 0<x<1, y represents a number satisfying the condition 0≦y<1, and z represents a number satisfying the condition 0<z<1, with the proviso that x+y+z=1, the semiconductor layer having been formed with a laser assisted metalorganic vapor phase epitaxy technique. A semiconductor light emitting device comprises the semiconductor layer and may be constituted as a semiconductor laser or a light emitting diode.

REFERENCES:
patent: 6242761 (2001-06-01), Fujimoto et al.
patent: 6479836 (2002-11-01), Suzuki et al.
patent: 64-17484 (1989-01-01), None
patent: 5-206513 (1993-08-01), None
T. Takano et al., “Room-temperature deep-ultraviolet lasing at 241.5 nm of AIGaN multiple-quantum-well laser,” Applied Physics Letters, 2004, pp. 3567-3569, vol. 84, No. 18.

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