Semiconductor layer pressure switch

Details Semiconductor layer pressure switch Semiconductor layer pressure switch

1994-09-13

1998-09-08

Oen, William L.

Measuring and testing

Fluid pressure gauge

Diaphragm

200 83R, G01L 906, H01H 3540

Patent

active

058029117

ABSTRACT:
A pressure switch element (1) including a semiconductor layer (3) having a diaphragm portion (5) in its center and a plate (2) having a through hole communicating with the exterior, which are stacked one on another so as to define a gas space (6) between the diaphragm portion of the semiconductor layer and the plate. The element (1) further includes an insulating layer (4) provided on the lower surface of the diaphragm portion (5), a first switch electrode (9) provided on the lower surface of the insulating layer (4), and a second switch electrode (10) behaving as a fixed electrode provided on the plate (2), such that chattering is prevented with a simple structure without using a complex electronic circuit.

REFERENCES:
patent: 4543457 (1985-09-01), Petersen et al.
patent: 4965415 (1990-10-01), Young et al.
patent: 5177579 (1993-01-01), Jerman
patent: 5367878 (1994-11-01), Muntz et al.
IEEE Transactions On Electron Devices, vol. Ed-26(12), pp. 1887-1896, Dec. (1979).
IEEE Transactions On Electron Devices, vol. 35(8), pp. 1289-1297, Aug. (1988).

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