Semiconductor layer of oxygen depletion type cerium oxide or lea

Details Semiconductor layer of oxygen depletion type cerium oxide or lea Semiconductor layer of oxygen depletion type cerium oxide or lea

1978-07-05

1981-12-22

Segal, Robert

Electric lamp and discharge devices

Cathode ray tube

Image pickup tube

H01J 2945

Patent

active

043073190

ABSTRACT:
A photoelectric device comprises a signal electrode, a layer of amorphous photoconductor containing 50 atomic percent or more of selenium and an N-type semiconductor layer made of a material selected from the group consisting of oxygen depletion type cerium oxide and oxygen depletion type lead oxide and disposed therebetween, which has a thickness greater than 8 nm and up to and including 500 nm and a Fermi level located within an energy range of 0.2 to 0.8 eV from the bottom of a conduction band.

REFERENCES:
patent: 3346755 (1967-10-01), Dresner
patent: 3350595 (1967-10-01), Kramer
patent: 3396053 (1968-08-01), Tojo
patent: 3405298 (1968-10-01), Dresner

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