Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
2007-11-09
2010-02-02
Mulpuri, Savitri (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
C438S046000, C257SE21108
Reexamination Certificate
active
07655485
ABSTRACT:
In a method for fabricating a nitride-based semiconductor laser which forms, by a selective deposition, a current narrowing structure and a structure confining a light in a horizontal direction in parallel to a substrate, when the nitride-based semiconductor is selectively deposited by a metal organic chemical vapor deposition, silicon generated by decomposition of the silicon oxide film used as the mask for the selective deposition is prevented from being deposited on a re-growth boundary. For this purpose, a silicon nitride film is used as the mask for the selective deposition, and when the nitride-based semiconductor is selectively deposited by the metal organic chemical vapor deposition, a V-group material of the nitride-based semiconductor, namely, a nitrogen material, for example, ammonia, is supplied so that the decomposition of the silicon nitride film used as the mask for the selective deposition, is prevented.
REFERENCES:
patent: 5420198 (1995-05-01), Papazoglou et al.
patent: 5438583 (1995-08-01), Narui et al.
patent: 5787104 (1998-07-01), Kamiyama et al.
patent: 5962875 (1999-10-01), Motoki et al.
patent: 6030849 (2000-02-01), Hasegawa et al.
patent: 6072819 (2000-06-01), Shakuda
patent: 6111277 (2000-08-01), Ikeda
patent: 6133058 (2000-10-01), Kodiguchi et al.
patent: 6177688 (2001-01-01), Linthicum et al.
patent: 6187606 (2001-02-01), Edmond et al.
patent: 6284559 (2001-09-01), Hata
patent: 6326638 (2001-12-01), Kamiyam et al.
patent: 6377596 (2002-04-01), Tanaka et al.
patent: 6455337 (2002-09-01), Sverdlov
patent: 6498048 (2002-12-01), Morita
patent: 6617182 (2003-09-01), Ishida et al.
patent: 6887726 (2005-05-01), Kimura
patent: H04-340284 (1992-11-01), None
patent: H08-18159 (1996-01-01), None
patent: H08-264454 (1996-10-01), None
patent: H09-036473 (1997-02-01), None
patent: H09-036475 (1997-02-01), None
patent: WO97/11518 (1997-03-01), None
patent: H09-199791 (1997-07-01), None
patent: 2000-12900 (2000-01-01), None
S. Nakamura et al., Bluish-Pruple InGaN Multi-Quantum Well Structure Laser Diodes, Extended Abstracts of 1996 International Conference on Solid State Devices and Materials, Yokohama, 1996, pp. 67-69).
Nakamura et al., Ridge-geometry InGaN multi-quantum-well-structure laser diodes, Appl. Phys. Lett., 69(1996) 1577.
Mulpuri Savitri
NEC Corporation
Sughrue & Mion, PLLC
LandOfFree
Semiconductor layer formed by selective deposition and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor layer formed by selective deposition and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor layer formed by selective deposition and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4174500