Semiconductor lasers fabricated from impurity induced disorderin

Coherent light generators – Particular active media – Semiconductor

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372 45, 372 46, 357 17, H01S 319

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active

047275561

ABSTRACT:
A semiconductor laser having a single lasing element or multiple lasing elements is provided with a structural feature in at least one cladding region of the laser that permits partial compositional disordering upon the application of impurity induced disordering (IID) techniques, which disordering is of sufficient magnitude to bring about deformity in the compositional structure of the deposited layer(s) of the laser resulting in changes in the refractive index properties of the induced disordered regions compared to adjacent and remaining undisordered regions thereby creating optical cavities functioning as optical waveguides for propagating radiation generated upon lasing. The structural feature that may be utilized may be a disordering layer having low refractive index properties but not being sufficiently thin to exhibit quantum size effects. Such a feature may comprise a thin layer, e.g. of GaAlAs of high Al content or may comprise an edge or interface established between a high refractive index cladding layer and a lower refractive index cladding layer of a multiple cladding heterostructure.

REFERENCES:
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W. Streifer et al., "Phased Array Diode Lasers", Laser Focus/Electro-Optics, Jun. 1984.
J. Katz et al., "Supermode Discrimination in Phased-Locked Arrays of Semiconductor Lasers", IEEE International Semiconductor Conference in Brazil, Jul. 1984.
Twu et al., "High Power Coupled Ridge Waveguide Semiconductor Laser Arrays", APL, vol. 45(7), pp. 709-711 (Oct. 1, 1984).
S. Mukai et al., "Fundamental Mode Oscillation . . . Laser Array", APL, vol. 45(8), pp. 834-835 (Oct. 15, 1984).

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