Semiconductor lasers and method for producing the same

Details Semiconductor lasers and method for producing the same Semiconductor lasers and method for producing the same

1982-10-05

1985-07-30

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 372 46, H01S 319

Patent

active

045326312

ABSTRACT:
A double heterojunction semiconductor laser having a high output power beam of the fundamental transverse mode, which includes a stripe active layer surrounded with clad layers and which has an upper plane and a lower plane, parallel to the upper plane, and sides inclined toward the upper and lower plane, the sides being uneven in a longitudinal direction.

REFERENCES:
patent: 4190813 (1980-02-01), Logan et al.
patent: 4366569 (1982-12-01), Mirao et al.
European Patent Application No. 0 044 571, Hitachi, filed Jul. 23, 1981, p. 5, claim 1, FIG. 1.
IEEE Journal of Quantum Electronics, vol. QE-16, No. 2, Feb. 1980, pp. 160-164, New York, Kishino et al., "Fabrication and Leasing Properties of Mesa Substrate Buried Heterostructure GalnAsP/lnP Lasers at 1.3 m Wavelength", paragraph II.

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