Semiconductor lasers and method for making the same

Details Semiconductor lasers and method for making the same Semiconductor lasers and method for making the same

1996-09-26

1999-08-17

Bovernick, Rodney

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

059404248

ABSTRACT:
A semiconductor laser diode, and a method for producing the semiconductor laser diode, includes a waveguide being terminated by a back facet and a front facet and a front facet coating and a back facet coating having a reflectivity providing for controlled decoupling of light at the front facet from the standing lightwave in the waveguide. The front facet coating includes a stack of layers providing for a phase shift of the standing lightwave within the waveguide such that the intensity of the lightwave at the front facet, where the light is decoupled from the standing lightwave, has a relative minimum.

REFERENCES:
patent: 4092659 (1978-05-01), Ettenberg
patent: 4731792 (1988-03-01), Shimizu et al.
patent: 4951291 (1990-08-01), Miyauchi et al.
patent: 4975922 (1990-12-01), Sakane et al.
patent: 5063173 (1991-11-01), Gasser et al.
patent: 5497389 (1996-03-01), Kasukawa et al.
A. Moser et al, Thermodynamics approach to catastrophic optical mirror damage of AlGaAs single quantum well lasers, Appl.Phys.Lett.55(12), Sep. 18, 1989, pp. 1152-1154.
High-Power Ridge-Waveguid AlGaAs Grin-Sch Laser Diode, Electronics Letters Sep. 25, 1986 vol. 22 No. 20.

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