Coherent light generators – Particular beam control device – Optical output stabilization
Patent
1985-10-07
1988-06-28
Davie, James W.
Coherent light generators
Particular beam control device
Optical output stabilization
372 44, 372 96, H01S 319
Patent
active
047544597
ABSTRACT:
The emission linewidth of a semiconductor laser can be reduced by operating it at a wavelength which is less than the wavelength of maximum gain at the threshold current, .lambda. max. An assembly for carrying out such operation comprises a ridge waveguide laser provided with a distributed feedback (DFB) grating. The period of the grating is selected to give a predetermined emission wavelength to the laser which is shorter than .lambda. max.
REFERENCES:
Henning et al, "Measurements of the Linewidth of Ridge-Guide DFB Lasers", Electronics Letters, Oct. 11, 1984, vol. 20, No. 21, pp. 885-887.
Optics Communications, vol. 55, No. 3, Sep. 1, 1985, pp. 174-178, Elsevier Science Publishers B.V., Amsterdam, NL; M. De Labachelerie et al.: "An 850 nm Semiconductor Laser Tunable over a 300 A Range".
Japanese Journal of Applied Physics, vol. 24, No. 7, part 2, Jul. 1985, pp. L519-L521, Tokyo, JP; N. Ogasaware et al.: "Linewidth Enhancement Factor in GaAs/AlGaAs Multi-Quantum-Well Lasers".
Applied Physics Letters, vol. 42, No. 8, Apr. 15, 1983, pp. 631-622, American Institute of Physics, New York, US; K. Vahala et al.: "On the Linewidth Enhancement Factor Alpha in Semiconductor Injection Lasers".
Journal of Applied Physics, vol. 56, No. 3, Aug. 1, 1984, pp. 670-675, American Institute of Physics, New York, US; J. E. Epler et al.: "High-Energy (7300A) 300 K Operation of Single- and Multiple-Stripe Quantum-Well Heterostructure Laser Diodes in an External Grating Cavity".
IEEE Journal of Quantum Electronics, vol. QE-18, No. 2, Feb. 1982, pp. 259-264, IEEE, New York, US; C. H. Henry: "Theory of the Linewidth of Semiconductor Lasers".
Electronics Letters, vol. 19, No. 22, Oct. 27, 1983, pp. 927-929, Hitchin Herts, GB; I. D. Henning et al.: "Measurements of the Semiconductor Laser Linewidth Broadening Factor".
Electronics Letters, Feb. 3, 1983, vol. 19, No. 3; "10 kHz Linewidth 1.5 .mu.m InGaAsP External Cavity Laser with 55 nm Tuning Range".
British Telecommunications PLC
Davie James W.
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