Semiconductor lasers

Coherent light generators – Particular active media – Semiconductor

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372 46, 357 17, H01S 319

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active

046619607

ABSTRACT:
A semiconductor laser comprising in the direction parallel to a junction on both sides of a stripe-shaped active layer of double-hetero structure a semi-insulating current blocking layer which has a refractive index smaller than that of the active layer and of which the resistance is increased by doping of an impurity.

REFERENCES:
patent: 4561096 (1985-12-01), Namizaki et al.
Ishikawa et al., "V-Grooved Substrate Buried Heterostructure InGaAsP/InP Laser by One Step Epitaxy", J. Appl. Phys. 53(4) Apr. 1982, pp. 2851-2833.
"Shunt Current and Excess Temperature Sensitivity of 1.sub.th and .eta..sub.ex in 1.3 .mu.m InGaAsP DH Lasers," Namazaki et al., Electronic Letters Aug. 5, 1982, vol. 18, No. 16, pp. 703-705.
"Stable Longitudinal-Mode InGaAsP/InP Internal-Reflection-Interference Laser," Ohshima et al., IEEE Journal of Quantom Electronics, vol. QE-21, No. 6, Jun. 1985, pp. 563-567.
"Degradation Mechanism in 1.3 .mu.m InGaAsP/InP Buried Crescent Laser Diode at a High Temperature," Oomura et al., Electronics Letters May 26, 1983, vol. 19, No. 11.
"V-Grooved Substrate Buried Heterostructure InGaAsP/InP Laser Emitting at 1.3 .mu.m Wavelength," Ishikawa et al., IEEE Transactions on Microwave Theory and Techniques, vol. MTT-30, No. 10, Oct. 1982, pp. 1692-1699.
"Reproducibility of Low Carrier Concentration in LPE InP Using Batch Melts," Yamazaki et al., J. of Crystal Growth 61 (1983), pp. 289-294.
"Low-Temperature Zn- and Cd-Diffusion Profiles in InP and Formation of Guard Ring in InP Avalanche Photodiodes," Ando et al., IEEE Transactions on Electron Devices, vol. ED-29, No. 9, Sep. 1982, pp. 1408-1413.
"V-Grooved Substrate Buried Heterostructure InGaAsP/InP Laser," Electronics Letters, Jun. 25, 1981, vol. 17, No. 13, pp. 465-467.

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