Semiconductor lasers

Details Semiconductor lasers Semiconductor lasers

1990-01-24

1991-03-12

Epps, Georgia

Coherent light generators

Particular active media

Semiconductor

372 46, H01S 319

Patent

active

049998412

ABSTRACT:
The invention is directed to a semiconductor laser wherein the first embodiment is characterized in that the first upper portion cladding layer is assumed to be a double layer construction, the upper layer portion is assumed to be higher in carrier concentration than the lower layer portion, the series resistance component is restrained, so that the sequential direction voltage V.sub.F may be lowered without damaging the other characteristics such as oscillation start current I th and so on.

REFERENCES:
patent: 4567060 (1986-01-01), Hayakawa et al.

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