Semiconductor laser with superlattice cladding layer

Details Semiconductor laser with superlattice cladding layer Semiconductor laser with superlattice cladding layer

1993-01-08

1996-11-12

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 44, 372 46, H01S 319

Patent

active

055747418

ABSTRACT:
A semiconductor laser device having a first conductivity type cladding layer, an active layer, and a second conductivity type cladding layer successively disposed on a first conductivity type substrate includes a superlattice semiconductor multi-layered structure disposed at least either between the active layer and the first conductivity type cladding layer or between the active layer and the second conductivity type cladding layer. The superlattice semiconductor multi-layered structure may include a multiquantum barrier and this multiquantum barrier may include a buffer layer for preventing tunneling disposed at the side of the active layer and a superlattice multi-layered film structure including plural barrier layers and plural well layers alternatingly laminated. As a result, light intensity at the laser facet is reduced, suppressing facet deterioration during high-power operation.

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