Semiconductor laser with super structure grating distributed Bra

Details Semiconductor laser with super structure grating distributed Bra Semiconductor laser with super structure grating distributed Bra

1994-12-19

1996-03-05

Bovernick, Rodney B.

Coherent light generators

Particular resonant cavity

Distributed feedback

372102, 372 20, 372 50, H01S 310

Patent

active

054973937

ABSTRACT:
Disclosed is a semiconductor laser with a super structure grating DBR capable of generating a pulse train of from several hundred giga Hz to several tera Hz, comprising a saturable absorber section, a gain section, a phase control section and an super structure grating distributed Bragg reflector section, the Bragg reflector section having at least five sampling periods, each of the sampling periods having grating pitches of 233.5 nm, 235 nm, 236.5 nm, 238 nm and 239.5 nm, and said grating pitches being arranged corresponding to wavelengths of 5837.5 nm, 1175 nm, 5912.5 nm, 1195 nm and 5987.5 nm, respectively.

REFERENCES:
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patent: 5379318 (1995-01-01), Weber
Arahira et al, "Transform-Limited Optical Short-Pulse Generation at High Repetition Rate Over 40 GHz from a monolithic Passive Mode-Locked DBR Laser Diode", IEEE Phot. Tech. Lett., vol. 5, No. 12, Dec. 1993, pp. 1362-1365.
Jayaraman et al, "Extended Tuning Range in Sampled Grating DBR Lasers", IEEE Phot. Tech. Lett., vol. 5, No. 5, May 1993, pp. 489-491.

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