Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2005-03-22
2005-03-22
Prenty, Mark V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S023000, C257S431000, C257S097000, C372S043010
Reexamination Certificate
active
06870178
ABSTRACT:
A quantum dot (QD) laser having greatly reduced temperature sensitivity employs resonant tunnel-injection of carriers into the QDs from a pair of quantum wells (QWs). The carriers are injected through barrier layers. Because the tunnel-injection process is essentially temperature-independent, and because the tunnel-injection of carriers is the dominant source of current through the device, temperature-dependent currents are virtually eliminated, resulting in a device having a temperature-independent threshold current. In an additional device, carriers are injected into QDs from a pair of optical confinement layers (OCLs), either by tunnelling or thermionic emission. Each barrier layer is designed to have a low barrier height for carriers entering the QDs, and a high barrier height for carriers exiting the QDs. As a result, parasitic current from carriers leaving the QDs is greatly reduced, which enables the device to have low temperature sensitivity even without using resonant tunnel-injection and/or QWs.
REFERENCES:
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patent: 20040129931 (2004-07-01), Asryan et al.
Yasuhiko Arakawa (1994) “Fabrication of quantum wires and dots by mocvd selective growth”, Solid-State Electronics, Elsevier Science Publishers: pps. 523-528, Apr. 1994.
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Huang et al. (2000) “Very Low Threshold Current Density Room Temperature Continuous-Wave Lasing from a Single-Layer InAs Quantum-Dot Laser”, IEEE 12: pps. 227-229, Mar. 2000.
Liu et al. (2000) “The Influence of Quantum-Well Composition on the Performance of Quantum Dot Lasers Using InAs/InGaAs Dots-in-a-Well (DWELL) Structures”, IEEE 36: pps. 1272-1279, Nov. 2000.
Asryan Levon V.
Luryi Serge
Baker & Botts LLP
Prenty Mark V.
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