Semiconductor laser with mesa stripe waveguide structure

Details Semiconductor laser with mesa stripe waveguide structure Semiconductor laser with mesa stripe waveguide structure

1988-12-13

1990-03-20

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

372 46, H01S 319

Patent

active

049107437

ABSTRACT:
There is disclosed a semiconductor layer which can emit a continuous laser beam in a visible wavelength range. The laser has an n-GaAs substrate. On this substrate, an n-InGaAlP cladding layer, an active layer, and p-InGaAlP cladding layers are sequentially formed, thus forming a double hetero-structure. A mesa-shaped, upper cladding layer is provided, defining a laser beam-guiding channel. A thin p-InGaAlP contact layer and a mesa-shaped, p-GaAs contact layer are formed on the top surface of the upper cladding layer. Two n-type semiconductive, current-blocking layers cover the slanted sides of the upper, mesa-shaped cladding layer and also the contact layer. They are made of the same n-GaAs compound semiconductor material as the substrate.

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