Semiconductor laser with low beam divergence

Details Semiconductor laser with low beam divergence Semiconductor laser with low beam divergence

1997-08-07

1998-09-29

Lee, John D.

Coherent light generators

Particular active media

Semiconductor

372 50, 385129, H01S 319, G02B 610

Patent

active

058155210

ABSTRACT:
The inventive III/V semiconductor lasers comprise mode-shaping layers disposed in the upper and lower cladding regions, respectively, and having larger refractive index than the adjoining cladding material. Incorporation of the mode-shaping layers can significantly spread the mode structure of the laser, with attendant reduction of beam spreading. Preferred embodiments are Al-free III/V semiconductor lasers. Especially preferred are such lasers that do not have quaternary III/V semiconductor material between active region and substrate, for improved heat removal.

REFERENCES:
patent: 4468765 (1984-08-01), Hensel et al.
patent: 4941146 (1990-07-01), Kobayashi
patent: 5084880 (1992-01-01), Esterowitz et al.
patent: 5088099 (1992-02-01), Chen et al.
patent: 5289484 (1994-02-01), Kayakawa
patent: 5395792 (1995-03-01), Ikawa et al.
patent: 5432809 (1995-07-01), Grodzinski et al.
patent: 5457562 (1995-10-01), Tremblay
patent: 5491711 (1996-02-01), Mand et al.
Patent Abstracts of Japan, vol. 017, No. 128, (E-1333), 18 Mar. 1993 & JP 04 303986 A, (Mitsubishi Electric Corp), 27 Oct. 1992.
Patent Abstracts of Japan, vol. 003, No. 071 (E-118), 20 Jun. 1979 & JP 54 051391 A, (Toshiba Corp.), 23 Apr. 1979.
Patent Abstracts of Japan, vol. 095, No. 002, 31 Mar. 1995 & JP 06 318754 A, (Matsushita Electric Ind Co Ltd.), 15 Nov. 1994.
"Spot Size Expansion for Laser-to-Fiber Coupling Using an Integrated Multimode Coupler", by J. Buus, Journal of Lightwave Technology, vol. 11, No. 4, Apr. 1993.
"980 nm Spread Index Laser With Strain Compensated InGaAS/GaAsP/InGaP and 90% Fibre Coupling Efficiency", by D. Vakhshoori et al., Electronics Letters, vol. 32, No. 11, 23 May 1996, pp. 1007-1008, XP 000599136.
"Theoretical Investigation Investigation on Semiconductor Lasers with Passive Waveguides", by S. t. Yen et al., IEEE Journal of Quantum Electronics, vol. 32, No. 1, XP 000548674, 1 Jan. 1996, pp. 4-13, New York.
"High-Temperature Reliability of Aluminum-free 980 nm and 808 nm Laser Diodes", by J. Diaz et al., Compound Semiconductors 1995, Proceedings of the 22nd International Symposium on Compound Semiconductors, Cheju Island, Korea, Aug. 28 -Sep. 2, 1995, pp. 1041-1046, XP000590398.

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