Semiconductor laser with localization of current

Details Semiconductor laser with localization of current Semiconductor laser with localization of current

1990-05-24

1991-07-30

Epps, Georgia

Coherent light generators

Particular active media

Semiconductor

372 45, 372 44, H01S 319

Patent

active

050365223

ABSTRACT:
The disclosure concerns semiconductor lasers in which the current has to be localized, preferably in the emissive strip. In a laser having at least one emissive strip and a contact for current injection, the current is localized on the strip by means of an overdoped well that goes through the confinement layer with doping gradient. This confinement layer is doped to a level of 10.sup.18 at.cm.sup.-3 in the vicinity of the strip and to a level of 2.10.sup.17 at.cm.sup.-3 in the vicinity of the injection contact. The disclosed device can be applied to telecommunications and data processing by optical fibers.

REFERENCES:
Patent Abstracts of Japan, vol. 7, No. 194 (E-195) (1339), Aug. 24, 1983; & JP-A-58 96 791, Jun. 8, 1983, O. Ueda, "Manufacturing of Semiconductor Light-Emitting Device".
IEEE Electron Device Letters, vol. EDL-1, May, 1980, No. 5, pp. 75-78, D. Kasemset et al., "Pb.sub.1-x Sn.sub.x Te/PbTe.sub.1-y Se.sub.y Lattice-Matched Buried Heterostructure Lasers with CW Single Mode Output".
Applied Physics Letters, vol. 40, No. 3, Feb. 1982, pp. 208-210, C. S. Hong et al., "High-Efficiency, Low-Threshold, Zn-Diffused Narrow Stripe GaAS/GaAIAs Double Heterostructure Lasers Grown by Metalorganic Chemical Vapor Deposition".
Patent Abstracts of Japan, vol. 11, No. 61 (E-483) (2508), Feb. 25, 1987; & JP-A-61 220 392, Sep. 30, 1986, H. Kawada, "Semiconductor Light-Emitting Element".

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