Semiconductor laser with light guide

Details Semiconductor laser with light guide Semiconductor laser with light guide

1976-12-02

1979-03-13

Miller, Jr., Stanley D.

Oscillators

Molecular or particle resonant type

350 9612, H01S 319

Patent

active

041445031

ABSTRACT:
In a semiconductor laser with light guide, wherein an active region to form the Fabry-Perot cavity is formed in a mesa part on a semiconductor substrate and mixed crystal semiconductor parts formed to fill the mesa-etched parts constitute light guides. The improvement is that a crystal semiconductor of the active region has the composition of Ga.sub.1-x Al.sub.x As (0.ltoreq.x<1) and a mixed crystal of the light guide has the composition of GaAs.sub.1-y P.sub.y (0<y<1) or Ga.sub.1-z Al.sub.z As (0<x<z<1) of sufficiently high (for instance, 10.sup.4 .OMEGA.cm) specific resistivity with respect to that of the active region, the value of y or z being selected to be smallest at a depth of the light guide where the lasing light is incident, and the energy gap of the mixed crystal part being selected to be larger than that of said active region, so that light loss in the light guide is decreased.

REFERENCES:
patent: 3785717 (1974-01-01), Croset et al.
patent: 3968564 (1976-07-01), Springthorpe
J. Free, "The Coming Age of Fiber Optics: How Wires of Glass will Revolutionize Communications", Popular Science, vol. 207, No. 2, Aug. 1975, pp. 82-85 and 111.
D. Schicketanz et al., "GaAs-Double-Heterostructure Lasers as Optical Amplifiers", IEEE J. of Quantum Electronics, vol. QE-11, No. 2 Feb. 1975, pp. 65-69.
Hurwitz et al., "Integrated GaAs-AlGaAs Double-Heterostructure Lasers", Applied Physics Letters, vol. 27, No. 4, Aug. 15, 1975, pp. 241-243.
Garmire, "Moving Toward Integrated Optics", Laser Focus Oct. 1975, pp. 55-59.

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