Semiconductor laser with light emitting slant plane and method o

Details Semiconductor laser with light emitting slant plane and method o Semiconductor laser with light emitting slant plane and method o

1996-06-07

1999-01-19

Chaudhuri, Olik

Coherent light generators

Particular active media

Semiconductor

372 44, 257 13, H01S 318

Patent

active

058621660

ABSTRACT:
A semiconductor laser having a stepped substrate of group III-V compound semiconductor exposing upper and lower flat planes and a slant plane coupling the upper and lower flat planes, a lower clad layer formed directly on the stepped substrate, an active layer formed directly on the lower clad layer, and an upper clad layer formed directly on the active layer and including a current blocking layer at partial first depth regions. Denoting an angle between a boundary plane, between a region in the upper clad layer along the upper flat plane and a region in the upper clad layer along the slant plane, and the slant plane of the active layer, or an angle between a first virtual plane and the slant plane of the active layer, the first virtual plane being made by extending a boundary plane, between a region in the lower clad layer along the upper flat plane and a region in the lower clad layer along the slant plane, into the upper clad layer, .theta., the angle .theta. at the partial first depth region, on the active layer side, for one of the upper and lower clad layers is different from the angle .theta. for the one clad layer at a second depth region more remote from the active layer than the first depth region.

REFERENCES:
patent: 4984242 (1991-01-01), Scifres et al.
patent: 5336635 (1994-08-01), Anayama
patent: 5375136 (1994-12-01), Anayama et al.
patent: 5436194 (1995-07-01), Kondo et al.
patent: 5646953 (1997-07-01), Naito et al.
Extended Abstract, Aug. 1992 Intern'l Conference on Solid State Devices and Materials, pp. 619-621, "One-Step MOVPE-Grown Index-Guide GaInP/AlGaInP Visible Laser Using Simultaneous Impurity Doping" C. Anayama et al., Fujitsu Laboratories, Ltd.
Applied Physics Letters, vol. 63, No. 13, Sep. 27, 1993; pp. 1736-1738 "One-Step-Vapor-Phase-Epitaxy-Grown AlGaInP Visible Laser Using Simultaneous Impurity Doping", C. Anayama et al.; Fujitsu Laboratories, Ltd.
Electronics Letters, vol. 30, No. 7, pp. 565-566, Mar. 31, 1994; "Alternate Doping of p-type and n-type Impurities for AlGaInP Selfaligned Stepped Substrate (S.sup.3) Lasers".

Affiliated with

Also associated with

Rating

Semiconductor laser with light emitting slant plane and method o does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor laser with light emitting slant plane and method o, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser with light emitting slant plane and method o will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1252635