Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2002-02-18
2003-06-10
Davie, James (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S096000
Reexamination Certificate
active
06577661
ABSTRACT:
BACKGROUND OF INVENTION
1. Field of the Invention
The present invention relates to a semiconductor laser. More particularly, the invention relates to a semiconductor laser with a lateral optical cavity based on III-V and II-VI semiconductor compounds and their alloys.
2. Description of the Prior Art
Semiconductor laser diodes with various shapes of lateral laser cavities such as micro-disk, equilateral triangle, micro-arc-ring, triangular ridge, L-shape ridge, U-shape ridge and bow-tie lasers are known, e.g. CN1267106.
In all these lasers surface mesa structures of various shapes are used for lateral light confinement.
However, the light reflections at the sides of mesa structures are not wavelength sensitive. These makes the surface mesa-structure-based optical resonators non-selective with respect to the different lateral optical modes and prevents fabrication of semiconductor lasers operating in a single mode or controlled multiple mode regimes.
Meanwhile, many applications require single mode or controllable multiple mode operation of semiconductor laser.
The present invention states semiconductor lasers with polygonal surface optical grating resonator (PGR) for lateral confinement of the light which allows selective excitation of the chosen optical mode or modes needed for various applications such as CD and DVD pick up heads, high quality laser printers and others.
Also, PGR allows controlled multiple wavelength operation of semiconductor lasers needed for telecommunication purposes.
SUMMARY OF INVENTION
It is an object of the present invention to provide a semiconductor laser which can operate in single mode or controllable multiple mode regimes.
REFERENCES:
patent: 6292503 (2001-09-01), Wantanabe et al.
patent: 6301283 (2001-10-01), Chen et al.
Rebane Yury Toomasovich
Shreter Yury Georgievich
Wang Wang-Nang
Arima Optoelectronics Corp.
Davie James
Hsu Winston
LandOfFree
Semiconductor laser with lateral light confinement by... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor laser with lateral light confinement by..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser with lateral light confinement by... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3142427